Large Spin Hall Magnetoresistance And Its Correlation

Defect-induced spin disorder and magnetoresistance in single-crystal.
Giant anomalous Hall effect in a ferromagnetic kagome-lattice.
Topological Hall effect associated with spin reorientation transition.
Ferromagnetism and giant magnetoresistance in zinc-blende FeAs.
Quantum spin Hall state in monolayer 1T'-WTe2 | Nature Physics.
Anomalously large anisotropic magnetoresistance in a perovskite... - PNAS.
Correlation between the spin Hall angle and the structural phases of.
Electrochemistry in Magnetic Fields - Luo - Wiley Online Library.
Exchange magnetic field torques in YIG/Pt bilayers observed by the spin.
Phys. Rev. B 103, 144410 (2021) - Large anomalous Hall effect in the.
Large magnetoresistance in non-magnetic silver chalcogenides.
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Magnetoresistance of epitaxial and polycrystalline Fe3O4 films near.

Defect-induced spin disorder and magnetoresistance in single-crystal.

Magnetoresistance was observed from these structures in the temperature range where the nonlinear Hall resistance occurs.3,5 Because of the strong correlation of the occurrence of the negative magnetoresistance and the nonlinear Hall re-sistance, the observed Hall resistance was explained as an anomalous Hall effect AHE by assuming the existence of. The superconducting regions in our device appear to be largely insensitive to D, exhibiting, for instance, similar T c at large positive and large negative values of D (fig. S9). In contrast, the insulating state at − n s /2 shows a strong dependence on D , with resistance exceeding 10 kilohms for positive D but appearing to drop to zero for.

Giant anomalous Hall effect in a ferromagnetic kagome-lattice.

Anomalous Hall magnetoresistance (AHMR) in single ferromagnetic layers arises from anomalous Hall effect induced spin current and its backflow. Here, we have studied the correlation between AHMR and… 2 PDF Physical origins of the magnetoresistance of platinum in contact with polycrystalline antiferromagnetic NiO M. Gamino, D. S. Maior, +4 authors. Tion because of its unique properties including high Curie temperature (T C 858K), 6 full spin polarization at the Fermi level,7 and a large net magnetic moment of about 4 l B/f.u. 8 In epitaxial Fe 3O 4 ﬁlms grown on MgO, Al 2O 3, and SrTiO 3 substrates, the mis-stacking of the Fe 3O 4 lattice on a substrate at the ﬁrst stage of nucleation. The force on a current-carrying wire in a perpendicular magnetic field is due to the force on the charge carriers moving through the wire. 12. This force on the charge carriers produces an increased resistance as the charge carriers collide more with atoms in the wire. This phenomenon is called magnetoresistance.

Topological Hall effect associated with spin reorientation transition.

We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts. We observe a large enhancement of both signals below the spin-spiral (Ts=28K) and the spin lock-in transitions (Tlock−in=14K). The SMR and SSE response in the spin lock-in phase are one order of magnitude larger than those observed at the.

Ferromagnetism and giant magnetoresistance in zinc-blende FeAs.

The observed correlation between SMR/SHAHE and magnetization indicates that the field-induced magnetization plays a significant role in the spin transport at the Pt/GGG interface. Our microscopic theory well explains the SMR signals as a function of magnetic fields and quantifies the microscopic spin exchange parameters at the Pt/GGG interface. In this study, we apply the fluctuation theorem to spin transport in spin Hall magnetoresistance (SMR) that arises in a bilayer system composed of a normal metal (NM) and a ferromagnetic insulator (FI) , , , , , , , , , ,.The mechanism of SMR is explained as follows , , (see Fig. 1).First, an external current applied to NM induces spin accumulation near the NM/FI interface through the spin.

Quantum spin Hall state in monolayer 1T'-WTe2 | Nature Physics.

Here we report that the spin Hall magnetoresistance of Ta/NiFe bilayers is negative, necessitating an additional interconversion process. Our theory shows that the interconversion owing to. Dimensional-confinement effect coupled with a large surface-induced spin-Gipping cross section. The EHE exhibits a strong correlation with GMR, which is likely due to the surface-induced spin-orbit interaction. Since the discovery of giant magnetoresistance (GMR) in layered structures, we have witnessed a series of de-velopments in the. The development of spintronics as a major eld of research in the 1980s was prompted by the discovery of the giant magnetoresistance e ect, allowing for e cient spin-dependent transport[6]. Over time, spintronics has evolved from the study of spin polarized currents to pure spin currents.

Anomalously large anisotropic magnetoresistance in a perovskite... - PNAS.

Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse spin-Hall effect (spin current detection). Here, we undertake current, magnetic field, crystallography dependent magnetoresistance and magneto thermal.

Correlation between the spin Hall angle and the structural phases of.

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Electrochemistry in Magnetic Fields - Luo - Wiley Online Library.

Chirality-induced current-perpendicular-to-plane magnetoresistance (CPP-MR) originates from current-induced spin polarization in molecules. The current-induced spin polarization is widely recognized as a fundamental principle of chiral-induced spin selectivity (CISS). In this study, we investigate chirality-induced current-in-plane magnetoresistance (CIP-MR) in a chiral molecule/ferromagnetic. Magnetoresistance (MR) is a property of materials in which the resistivity depends on the strength of applied magnetic field. Anisotropic magnetoresistance (), on the other hand, is when the resistivity also depends on the field orientation with respect to either the electrical current or the crystal axes.Whereas the dependence of resistivity on the field direction relative to the electrical.

Exchange magnetic field torques in YIG/Pt bilayers observed by the spin.

This confirms that the SMR and spin-orbit torques are closely correlated. Results Spin Hall magnetoresistance We first present the measurement of the longitudinal ( Rxx) and transverse resistances. Download Download high-res image (193KB) Download Download full-size image For Mn 1.9 Co 0.1 Sb alloy: (a) Hall resistivity (ρ xy) measured at various temperatures from 320 to 220 K with the out-of-plane magnetic field μ 0 H. (b) Magnetoresistance (MR) measured at different temperatures.(c) The representative ρ xy (H) curves (black squares) measured at 260 K, calculated R 0 H+S A ρ xx. Request PDF | On Jun 17, 2022, Yongjin Lee and others published Gate-Tunable Magnetism and Giant Magnetoresistance in Suspended Rhombohedral-Stacked Few-Layer Graphene | Find, read and cite all.

Phys. Rev. B 103, 144410 (2021) - Large anomalous Hall effect in the.

Although theoretical understanding of doped mixed-valence manganites that exhibit colossal magnetoresistance (CMR) is still incomplete, the general observation of a systematic correlation at a given temperature between the magnetization and resistance both above and below the Curie temperature Tc can provide a phenomenological basis for describing the magnetotransport response of defective. Kagome magnets are believed to have numerous exotic physical properties due to the possible interplay between lattice geometry, electron correlation and band topology. Here, we report the large anomalous Hall effect in the kagome ferromagnet ${\\mathrm{LiMn}}_{6}{\\mathrm{Sn}}_{6}$, which has a Curie temperature of 382 K and easy plane along with the kagome lattice. At low temperatures.

Large magnetoresistance in non-magnetic silver chalcogenides.

Figure 1.1: It is known from the fties that manganites present a correlation between the ferromagnetic state and metallicity. Recently, in 1994, manganites were rediscovered as they showed a very large magnetoresistance: when a mag-netic eldisapplied, thepeakontheresistivity movestowardhighertemperatures and dramatically decreases its height. Spin Hall effect is due to classical rotation of electrons (Fig.15) Spin Hall effect = Rotation. In spin Hall experiments, they detected the directions of polarized lights ( NOT spin ! ). In normal Zeeman effect, the change of orbital angular momentum generates ( left or right ) circular polarized lights depending on the change of ± m ( see.

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Spin-dependent conduction and polarization in chiral polymers were studied for polymers organized as self-assembled monolayers with conduction along the polymer backbone, namely, along its longer axis. Large spin polarization and magnetoresistance effects were observed, showing a clear dependence on the secondary structure of the polymer. Here, the authors report temperature-dependent spin Hall magnetoresistance (SMR) of Pt on the complex antiferromagnet DyFeO 3.The symmetry of the SMR as a function of in-plane magnetic field angle shows a 3D rotation of the Fe 3 + Néel vector G, while the paramagnetic Dy 3 + affects its magnitude. The SMR monitors the phase transition of Fe 3 + spins at and below the Morin temperature of 50 K. Jul 30, 2018 · e, Magnetoresistance measured in fields up to 14 T at 2 K, showing a non-saturated positive magnetoresistance. f, Hall data with a nonlinear behaviour at high fields, indicating the coexistence of.

Magnetoresistance of epitaxial and polycrystalline Fe3O4 films near.

Spin current represents a flow of spin angular momentum carried by electrons. The spin Hall effect allows electrical generation of spin current in materials with strong spin-orbit interaction (SOI) ().The spin Hall angle, a material parameter that characterizes charge to spin conversion efficiency, scales with the longitudinal resistivity and the spin Hall conductivity ().